Friday, May 05, 2017

TSMC Proposes Storage Node Screen for BSI GS Pixel

TSMC patent application US20170117315 "Back-side illuminated (BSI) image sensor with global shutter scheme" by Chun-yuan Chen, Ching-chun Wang, Dun-nian Yaung, Shyh-fann Ting, Wei Chuang Wu, Yen-ting Chiang, and Kuan-tsun Chen proposes a light reflector to protect storage node from light, a tough challenge in BSI GS pixels. The reflecting element is shown as 108 on the figure 3 below:

4 comments:

  1. But in this case, the fill factor is largely reduced.

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    Replies
    1. Why is that? The reflective material has an aperture which still allows light to reach the sensing element.

      Delete
  2. What kinds of benefit on this type BSI GS Pixel?

    ReplyDelete
    Replies
    1. With back side thinned sensors the storage node is susceptible to noise from light exposure. The reflector over storage node lowers the noise.

      Delete

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